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Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA4N80P IXTP4N80P
VDSS = 800 = 3.6 ID25 RDS(on) ≤ 3.4
V A Ω
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C
Maximum Ratings 800 V 800 V ± 30 ± 40 3.6 8 2 20 250 10 100 -55 ... +150 150 -55 ... +150 V V A A A mJ mJ V/ns W °C °C °C
TO-263 (IXTA)
G
S (TAB)
TO-220 (IXTP)
G
D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.062 in.
IXTP4N80P Datasheet
