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IXTP50N20PM - N-Channel MOSFET

Datasheet Summary

Features

  • Drain Source Voltage- : VDSS= 200V(Min).
  • Static drain-source on-resistance : RDS(on) ≤ 60mΩ@VGS=10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IXTP50N20PM
Manufacturer INCHANGE
File Size 247.02 KB
Description N-Channel MOSFET
Datasheet download datasheet IXTP50N20PM Datasheet
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isc N-Channel MOSFET Transistor IXTP50N20PM ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 60mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 90 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1.
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