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IXTP50N20PM - Power MOSFET

Key Features

  • Plastic Overmolded Tab for Electrical Isolation.
  • International Standard Package.
  • Avalanche Rated.
  • Fast Intrinsic Diode.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarTM Power MOSFET (Electrically Isolated Tab) IXTP50N20PM VDSS = ID25 =  RDS(on) 200V 50A 60m N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 200 V 200 V 20 V 30 V 50 A 120 A 50 A 1 J 10 V/ns 90 W -55 ... +175 C 175 C -55 ... +175 C 300 °C 260 °C 1.13 / 10 Nm/lb.