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IXTP50N20P - Power MOSFET

Download the IXTP50N20P datasheet PDF. This datasheet also covers the IXTA50N20P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard packages.
  • Unclamped Inductive Switching (UIS) rated.
  • Low package inductance - easy to drive and to protect Advantages.
  • Easy to mount.
  • Space savings.
  • High power density © 2008 IXYS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA50N20P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP50N20P N-Channel MOSFET INCHANGE
IXTP50N20PM N-Channel MOSFET INCHANGE
IXTP50N20PM Power MOSFET IXYS
IXTP50N25T Trench Gate Power MOSFET IXYS
IXTP50N085T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTP50N085T Power MOSFET
IXTP52P10P P-Channel MOSFET
IXTP55N075T Power MOSFET
IXTP5N50P Power MOSFET
IXTP01N100D N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA50N20P IXTP50N20P IXTQ50N20P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-3P,TO-220) TO-263 TO-220 TO-3P Maximum Ratings 200 V 200 V ±20 V ±30 V 50 A 120 A 50 A 1 J 10 V/ns 360 W - 55 ... +175 175 - 55 ... +175 300 260 1.13/10 2.5 3.0 5.5 °C °C °C °C °C Nm/lb.in.