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IXTP56N15T - N-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on) ≤ 36mΩ@VGS=10V.
  • Fully characterized avalanche voltage and current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IXTP56N15T
Manufacturer INCHANGE
File Size 246.21 KB
Description N-Channel MOSFET
Datasheet download datasheet IXTP56N15T Datasheet
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isc N-Channel MOSFET Transistor IXTP56N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 36mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 56 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 300 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.
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