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IXTP56N15T - Power MOSFETs

Download the IXTP56N15T datasheet PDF. This datasheet also covers the IXTA56N15T variant, as both devices belong to the same power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z z z z z TO-220AB (IXTP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Dynamic dv/dt Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA56N15T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA56N15T IXTP56N15T VDSS ID25 RDS(on) = 150V = 56A ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 56 140 5 500 3 300 -55 ... +175 175 -55 ... +175 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g Features z z z z z z z TO-220AB (IXTP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062in.