IXTP56N15T Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP56N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 36mΩ@VGS=10V ·Fully characterized avalanche volta

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TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA56N15T IXTP56N15T VDSS ID25 RDS(on) = 150V = 56A ≤

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