IXTQ60N20T
Key Features
- Drain Source Voltage- : VDSS= 200V(Min)
- Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max)
- Fast Switching
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXTQ60N20T |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 252.36 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IXTQ60N20T | IXYS | Power MOSFET |
| IXTQ60N20L2 | IXYS | Power MOSFET |