| Part Number | IXTQ60N20T Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 40mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot .
*Drain Source Voltage- : VDSS= 200V(Min) *Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) *Fast Switching *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switch-Mode and Resonant-Mode Power Supplies *DC-DC Converters . |
IXTQ60N20T Datasheet and Specifications PDF
The IXTQ60N20T is a N-Channel MOSFET.
| Part Number | IXTQ60N20T Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | IXYS |
| Overview | TrenchTM Power MOSFET IXTA60N20T IXTP60N20T IXTQ60N20T VDSS ID25 RDS(on) = 200V = 60A ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (I. z z z z z High Current Handling Capability 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS . |