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Schottky Barrier Rectifier
FEATURES ·Low Forward Voltage ·150℃ Operating Junction Temperature ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High Surge Capacity ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
INCHANGE Semiconductor
MBR10100FCT
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
IF(AV)
IFSM
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 100℃
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60Hz)
TJ
Junction
MBR10100FCT Datasheet
