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MBR10100G - Schottky Barrier Rectifier

Key Features

  • Low Forward Voltage.
  • Guaranteed Reverse Avalanche.
  • Low Power Loss/High Efficiency.
  • High Surge Capacity.
  • Low Stored Charge Majority Carrier Conduction.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR10100G FEATURES ·Low Forward Voltage ·Guaranteed Reverse Avalanche ·Low Power Loss/High Efficiency ·High Surge Capacity ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max.