Datasheet Details
| Part number | MJ16012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.74 KB |
| Description | NPN Transistor |
| Datasheet | MJ16012-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJ16012 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.74 KB |
| Description | NPN Transistor |
| Datasheet | MJ16012-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical.
It is particularly suited for line-operated switchmode applications such as: switching regulators,inverters,solenoids,relay drivers,motor controls and deflection circuits and etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-peak 20 A IB Base Current-Continuous 10 A IBM Base Current-peak 15 A PC Collector Power Dissipation@TC=25℃ 175 W Ti Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Rresistance,Junction to Case 1.0 ℃/W MJ16012 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ16012 | 15 AMPERE NPN SILICON POWER TRANSISTORS | Motorola |
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MJ16012 | NPN SILICON POWER TRANSISTORS | ON |
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MJ16012 | SILICON POWER TRANSISTOR | SavantIC |
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