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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector- Base Voltage
850
V
VCEO(SUS) Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
10
A
IBM
Base Current-Peak
20
A
PC
Collector Power Dissipation@TC=25℃ 250
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SY
MJ16016 Datasheet
