Datasheet Details
| Part number | MJE15036 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.24 KB |
| Description | NPN Transistor |
| Datasheet | MJE15036-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor MJE15036.
| Part number | MJE15036 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.24 KB |
| Description | NPN Transistor |
| Datasheet | MJE15036-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·DC current gain - : hFE = 5000 (Min) @IC= 0.5 A : hFE = 3000 (Min) @IC= 2.0 A ·Complement to Type MJE15037 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 8 A IB Base Current Collector Power Dissipation PC @Ta=25℃ Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 2 W 50 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 1A ;
VCE= 5V ICBO Collector Cutoff Current VCB= 250V;
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