Inchange Semiconductor MJE16002
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJE16002 |
|---|---|
| Datasheet | MJE16002 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.)●High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in high-voltage, high-speed switching of inductive circuits where fall time and RBSOA are critical. they are particularly well-suited for line-operated switchmode applications such as:●Switching Regulators
●High resolution deflection circuits
●Inverters
●Motor drive Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-peak IB Base Current IBM Base Current-Peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range VALUE UNIT 850 V 450 V 6 V 5 A 10 A 4 A 8 A 80 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website： MAX UNIT 1.56 ℃/W 1 isc & isc...
