Datasheet4U Logo Datasheet4U.com

MJE16002 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor MJE16002.

General Description

·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed switching of inductive circuits where fall time and RBSOA are critical.

they are particularly well-suited for line-operated switchmode applications such as: ·Switching Regulators ·High resolution deflection circuits ·Inverters ·Motor drive Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-peak IB Base Current IBM Base Current-Peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range VALUE UNIT 850 V 450 V 6 V 5 A 10 A 4 A 8 A 80 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website:www.iscsemi.com MAX UNIT 1.56 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor MJE16002 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A ;IB= 0.2A VCE(sat)-2 VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC= 3A ;IB= 0.4A TC= 100℃ IC= 3A ;IB= 0.4A TC= 100℃ VCB= 850V;

MJE16002 Distributor