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MJE16004 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed switching of inductive circuits where fall time and RBSOA are critical.

they are particularly well-suited for line-operated switchmode applications such as: ·Switching Regulators ·High resolution deflection circuits ·Inverters ·Motor drives ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-peak 10 A IB Base Current 4 A IBM Base Current-Peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 8 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.56 ℃/W MJE16004 isc Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A ;IB= 0.15A VCE(sat)-2 VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC= 3A ;IB= 0.3A TC= 100℃ IC= 3A ;IB= 0.3A TC= 100℃ VCB= 850V;

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