MJE16004 Overview
Description
With TO-220 package - High voltage ,high speed APPLICATIONS - Switching regulators - High resolution deflection circuits - Inverters - Motor drives PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION MJE16004 SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 850 450 6 5 10 4 8 80 150 -65~150 UNIT V V V A A A A W SYMBOL Rth j-C PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector outoput capacitance CONDITIONS IC=100mA; IB=0 IC=1.5A ;IB=0.15A IC=3A ;IB=0.3A TC=100 IC=3A ;IB=0.3A TC=100 VCEV=850V; VBE=1.5V TC=100 VEB=6V; IC=0 IC=5A ; VCE=5V IE=0 ; VCB=10V;f=1.0kHz 7 MIN 450 MJE16004 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV IEBO hFE COB TYP. MAX UNIT V 1.0 2.5 2.5 1.5 1.5 0.25 1.5 1.0 V V V mA mA 200 pF Switching times resistive load,Duty Cycle@2.0%,Pulse Width=30µs td tr ts tf Delay time Rise time Storage time Fall time 0.1 0.3 2.7 0.35 µs µs µs µs VCC=250V ,IC=3A IB1=0.3A; IB2=0.6A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE16004 Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3.
