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MJE53T - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

and line operated amplifier applications.

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isc Silicon NPN Power Transistor MJE53T DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications.
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