Datasheet Details
| Part number | MJE53T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.79 KB |
| Description | NPN Transistor |
| Datasheet | MJE53T-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor MJE53T.
| Part number | MJE53T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.79 KB |
| Description | NPN Transistor |
| Datasheet | MJE53T-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications.
Especially well suited for switching power supply applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 450 VCEO Collector-Emitter Voltage 350 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 5 ICM Collector Current-Peak 10 IB Base Current-Continuous 2 PC Collector Power Dissipation @ TC=25℃ 80 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE53T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 25mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
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