MN638S - NPN Transistor

Datasheet Summary

Description

Low Collector Saturation Voltage High DC Current Gain High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers Relay & solenoid drivers Motor controls General purpose power amplifi

INCHANGE

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Datasheet Details

Part number	MN638S
Manufacturer	INCHANGE
File Size	207.22 KB
Description	NPN Transistor
Datasheet	MN638S Datasheet
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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330-430 V VCEO Collector-Emitter Voltage 330-430 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ MN638S isc website：www.iscsemi.

Published: Sep 27, 2020 |