Datasheet Details
| Part number | MN638S |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.22 KB |
| Description | NPN Transistor |
| Datasheet | MN638S-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | MN638S |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.22 KB |
| Description | NPN Transistor |
| Datasheet | MN638S-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330-430 V VCEO Collector-Emitter Voltage 330-430 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ MN638S isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 20mA;
IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;
| Brand Logo | Part Number | Description | Manufacturer |
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MN638S | Power Transistor | Sanken |
| Part Number | Description |
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