MN638S datasheet by Inchange Semiconductor.
| Part number | MN638S |
|---|---|
| Datasheet | MN638S-INCHANGE.pdf |
| File Size | 207.22 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 20mA; IC= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MN638S | Power Transistor | Sanken |
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