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R6035ENZ1

Manufacturer: Inchange Semiconductor

R6035ENZ1 datasheet by Inchange Semiconductor.

R6035ENZ1 datasheet preview

R6035ENZ1 Datasheet Details

Part number R6035ENZ1
Datasheet R6035ENZ1-INCHANGE.pdf
File Size 299.40 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6035ENZ1 page 2

R6035ENZ1 Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 35 A IDM Drain Current-Single Pluse 105 A PD Total Dissipation @TC=25℃ 120 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6035ENZ1 Key Features

  • Drain Current -ID= 35A@ TC=25℃ -Drain Source Voltage

R6035ENZ1 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
ROHM Logo R6035ENZ1 Power MOSFET ROHM
Inchange Semiconductor logo - Manufacturer

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