R6507ENX - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	R6507ENX
Manufacturer	INCHANGE
File Size	246.81 KB
Description	N-Channel MOSFET
Datasheet	R6507ENX Datasheet
Additional preview pages of the R6507ENX datasheet.

Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 46 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resi

Features

Drain Current.
ID= 7A@ TC=25℃.
Drain Source Voltage- : VDSS=650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 665mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

R6507ENX - Power MOSFET (ROHM)
R6507ENJ - Power MOSFET (ROHM)
R6507 - (R650x / R651x) Microprocessors (Rockwell)
R6507KNJ - Power MOSFET (ROHM)
R6500 - Microcomputer Hardware Manual (Rockwell)
R6500-1 - One-Chip Microcomputer (Rockwell)
R6500-11 - One-Chip Microcomputers (Rockwell)
R6500-12 - One-Chip Microcomputers (Rockwell)

Other Datasheets by INCHANGE

R6507ENJ - N-Channel MOSFET
R6507KNJ - N-Channel MOSFET
R6504ENJ - N-Channel MOSFET
R6504ENX - N-Channel MOSFET
R6504KNJ - N-Channel MOSFET
R6504KNX - N-Channel MOSFET

Published: Mar 1, 2021 |