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SPA17N80C3 - N-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on) ≤0.29Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – SPA17N80C3

Datasheet Details

Part number SPA17N80C3
Manufacturer INCHANGE
File Size 242.41 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.29Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 42 Tj Max.
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