SPA17N80C3 - Cool MOS Power Transistor

Infineon Technologies

Datasheet Details

Part number	SPA17N80C3
Manufacturer	Infineon Technologies
File Size	683.11 KB
Description	Cool MOS Power Transistor
Datasheet	SPA17N80C3 Datasheet
Additional preview pages of the SPA17N80C3 datasheet.

📁 Similar Datasheet

SPA17N80C3 - N-Channel MOSFET (INCHANGE)
SPA1118Z - POWER AMPLIFIER (RF Micro Devices)
SPA11N60C3 - N-Channel MOSFET (INCHANGE)
SPA11N60C3E8185 - N-Channel MOSFET (INCHANGE)
SPA11N60CFD - N-Channel MOSFET (INCHANGE)
SPA11N65C3 - N-Channel MOSFET (INCHANGE)
SPA11N80C3 - N-Channel MOSFET (INCHANGE)
SPA12N50C3 - N-Channel MOSFET (INCHANGE)
SPA1526Z - 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER (RFMD)
SPA15N60C3 - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon Technologies

SPA11N60C2 - Cool MOS Power Transistor
SPA11N60C3 - Power Transistor
SPA11N60C3E8185 - Power Transistor
SPA11N60CFD - CoolMOS Power Transistor
SPA11N65C3 - Power Transistor
SPA11N80C3 - Power Transistor
SPA12N50C3 - Power Transistor
SPA15N60C3 - Cool MOS Power Transistor

Full PDF Text Transcription

Click to expand full text

SPP17N80C3 SPA17N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge VDS RDS(on) ID 800 0.29 17 V Ω A PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 23 1 • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP17N80C3 SPA17N80C3 Package Ordering Code PG-TO220 Q67040-S4353 PG-TO220-3-31 SP000216353 Marking 17N80C3 17N80C3 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=3.

Published: Jun 7, 2005 |