SPA17N80C3 Datasheet and Specifications PDF

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.29Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.

*Static drain-source on-resistance: RDS(on) ≤0.29Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Ideal for high-frequency switching and synchronous rectification
*ABSOLUTE MAXIMUM RA.

SPP17N80C3 SPA17N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge VDS RDS(on) ID 800 0.29 17 V Ω A PG.

* New revolutionary high voltage technology
* Worldwide best RDS(on) in TO 220
* Ultra low gate charge VDS RDS(on) ID 800 0.29 17 V Ω A PG-TO220-3-31 PG-TO220
* Periodic avalanche rated
* Extreme dv/dt rated
* Ultra low effective capacitances P-TO220-3-31 23 1
* Improved transconductance
*.