Datasheet4U Logo Datasheet4U.com

STB13NM60N - N-Channel MOSFET

Datasheet Summary

Features

  • Drain Current.
  • ID= 11A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 360mΩ(Max).
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – STB13NM60N

Datasheet Details

Part number STB13NM60N
Manufacturer INCHANGE
File Size 241.08 KB
Description N-Channel MOSFET
Datasheet download datasheet STB13NM60N Datasheet
Additional preview pages of the STB13NM60N datasheet.

📁 Similar Datasheet

  • STB13NM60N - N-CHANNEL POWER MOSFET (STMicroelectronics)
  • STB13N60M2 - N-channel MOSFET (STMicroelectronics)
  • STB13N80K5 - N-channel Power MOSFET (STMicroelectronics)
  • STB13NK60Z - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB13NK60Z - N-channel Power MOSFET (ST Microelectronics)
  • STB13NK60Z-1 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB13NK60Z-1 - N-channel Power MOSFET (ST Microelectronics)
  • STB13NK60ZT4 - N-channel Power MOSFET (STMicroelectronics)
  • STB13005 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS (ST Microelectronics)
  • STB13005-1 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS (ST Microelectronics)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 360mΩ(Max) ·100% avalanche tested ·Low input capacitance and gate charge ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 11 6.
Published: |