STMicroelectronics STB13NM60N
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STB13NM60N |
|---|---|
| Datasheet | STB13NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 3 1 D²PAK TAB 3 1 DPAK Order code VDS (@Tjmax) RDS(on) max STB13NM60N STD13NM60N 650 V 0.36 Ω ID 11 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance Figure 1. Internal schematic diagram ' RU 7$% * 6
APPLICATIONS
● Switching applicationsDESCRIPTION
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. 6& Order code STB13NM60N STD13NM60N Table 1. Device summary Marking Packages 13NM60N D²PAK DPAK Packaging Tape and reel June 2015 This is information on a pr
