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STB13NM60N - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • TAB 3 1 D²PAK TAB 3 1 DPAK Order code VDS (@Tjmax) RDS(on) max STB13NM60N STD13NM60N 650 V 0.36 Ω ID 11 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance Figure 1. Internal schematic diagram ' RU7$% .
  •  6  .

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Datasheet Details

Part number STB13NM60N
Manufacturer STMicroelectronics
File Size 648.70 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STB13NM60N Datasheet
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Full PDF Text Transcription

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STB13NM60N, STD13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages Datasheet — production data Features TAB 3 1 D²PAK TAB 3 1 DPAK Order code VDS (@Tjmax) RDS(on) max STB13NM60N STD13NM60N 650 V 0.36 Ω ID 11 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Figure 1. Internal schematic diagram ' RU7$% *  6  Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
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