STB13NM60N Datasheet
STB13NM60N Datasheet (STMicroelectronics)
STMicroelectronics
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to .
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D²PAK
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Order code VDS (@Tjmax) RDS(on) max
STB13NM60N STD13NM60N
650 V
0.36 Ω
ID 11 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
Figure 1. Internal schematic diagram
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* 6
Applications
* Switching applicat.
STB13NM60N Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 360mΩ(Max) ·100% avalanche tested ·Lo.
*Drain Current
*ID= 11A@ TC=25℃
*Drain Source Voltage-
: VDSS= 600V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 360mΩ(Max)
*100% avalanche tested
*Low input capacitance and gate charge
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switchi.