STB34NM60N
STB34NM60N is N-Channel MOSFET manufactured by Inchange Semiconductor.
Features
- Drain Current
- ID=31.5A@ TC=25℃
- Drain Source Voltage-
: VDSS= 600V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 105mΩ(Max)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
Drain Current-Single Pluse
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
±25
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER...
