STB34NM60ND Overview
These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low on-resistance that is unrivaled among silicon.
STB34NM60ND Key Features
- The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
