Description
These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure.
Features
- Order codes VDS @TJ max. RDS(on) max. ID
STB34NM60ND
STF34NM60ND STP34NM60ND
650 V
0.110 Ω 29 A
STW34NM60ND.
- The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices.
- 100% avalanche tested.
- Low input capacitance and gate charge.
- Low gate input resistance.
- Extremely high dv/dt and avalanche capabilities.
STB34NM60ND Datasheet
