STMicroelectronics STB34NM60ND
The resulting product boasts an extremely low on-resistance that is unrivaled among silicon| Part No. | STB34NM60ND |
|---|---|
| Datasheet | STB34NM60ND Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDS @TJ max. RDS(on) max. ID STB34NM60ND STF34NM60ND STP34NM60ND 650 V 0.110 Ω 29 A STW34NM60ND● The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices
● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
● Extremely high dv/dt and avalanche capabilities
APPLICATIONS
● Switching applicationsDESCRIPTION
These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure.
