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STB34NM60ND - N-CHANNEL POWER MOSFET

General Description

These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure.

Key Features

  • Order codes VDS @TJ max. RDS(on) max. ID STB34NM60ND STF34NM60ND STP34NM60ND 650 V 0.110 Ω 29 A STW34NM60ND.
  • The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Extremely high dv/dt and avalanche capabilities.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet — production data TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 !-V Features Order codes VDS @TJ max. RDS(on) max. ID STB34NM60ND STF34NM60ND STP34NM60ND 650 V 0.