STB34NM60N Overview
Key Specifications
Package: TO-263
Mount Type: Surface Mount
Pins: 3
Height: 4.6 mm
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Key Features
- Internal ' 7$% * 6 Order codes VDSS STB34NM60N 600 V STP34NM60N RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
