Datasheet Details
| Part number | STB34NM60N |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 1.30 MB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
 STB34NM60N Datasheet
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General Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Key Features
- TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% .
- 6 Order codes VDSS STB34NM60N 600 V STP34NM60N RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W.
- 100% avalanche tested.
- Low input capacitance and gate charge.
- Low gate input resistance.