STB34NM60N Datasheet | STMicroelectronics

ures 2 3 D2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% - 6 Order codes VDSS STB34NM60N 600 V STP34NM60N RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Applications - Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $0Y Order codes STB34NM60N STP34NM60N Table 1. Device summary Marking Packages 34NM60N D2PAK TO-220 Packaging Tape and reel Tube March...