STMicroelectronics STB34NM60N
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STB34NM60N |
|---|---|
| Datasheet | STB34NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% * 6 Order codes VDSS STB34NM60N 600 V STP34NM60N RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
● Switching applicationsDESCRIPTION
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. $0 Y Order codes STB34NM60N STP34NM60N Table 1. Device summary Marking Packages 34NM60N D2PAK TO-220 Packaging Tape and reel Tube March 2015 This is inform
