STB34NM60ND Datasheet and Specifications PDF

These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely .

Order codes VDS @TJ max. RDS(on) max. ID STB34NM60ND STF34NM60ND STP34NM60ND 650 V 0.110 Ω 29 A STW34NM60ND
* The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
* Extremely high.

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=29A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) ·100% avalanche tested ·Mini.

*Drain Current
*ID=29A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS(.