Datasheet4U Logo Datasheet4U.com

STP20NM60 - N-Channel MOSFET

Key Features

  • Typical RDS(on)=0.25Ω.
  • Low input capacitance and gate charge.
  • Low gate input resistances.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP20NM60 N-CHANNEL POWER MOSFET ST Microelectronics
STP20NM60A N-CHANNEL MOSFET ST Microelectronics
STP20NM60FD N-CHANNEL POWER MOSFET ST Microelectronics
STP20NM60FP N-CHANNEL POWER MOSFET ST Microelectronics
STP20NM65N N-channel Power MOSFET STMicroelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
STP20NM60FD N-Channel MOSFET
STP20NM60FP N-Channel MOSFET
STP20NM50FD N-Channel MOSFET
STP20N10L N-Channel MOSFET
STP20N65M5 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP20NM60 ·FEATURES ·Typical RDS(on)=0.25Ω ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Suitable for increasing power density of high voltage converters allowing system miniaturization ·High efficiencies. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 20 12.