Datasheet Summary
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
- Features
- Typical RDS(on)=0.25Ω
- Low input capacitance and gate charge
- Low gate input resistances
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Suitable for increasing power density of high voltage converters allowing system miniaturization
- High efficiencies.
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