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STP20NM60 - N-Channel MOSFET

Datasheet Summary

Features

  • Typical RDS(on)=0.25Ω.
  • Low input capacitance and gate charge.
  • Low gate input resistances.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STP20NM60

Datasheet Details

Part number STP20NM60
Manufacturer INCHANGE
File Size 185.70 KB
Description N-Channel MOSFET
Datasheet download datasheet STP20NM60 Datasheet
Additional preview pages of the STP20NM60 datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP20NM60 ·FEATURES ·Typical RDS(on)=0.25Ω ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Suitable for increasing power density of high voltage converters allowing system miniaturization ·High efficiencies. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 20 12.
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