STMicroelectronics STP20NM65N
This revolutionary Power MOSFET u associates a new vertical structure to the d company’s strip layout to yield one of the world’s ro lowest on-resistance and gate charge. It is P therefore suitable for the most demanding high lete efficiency converters.| Part No. | STP20NM65N |
|---|---|
| Datasheet | STP20NM65N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes ) STP20NM65N t(s STF20NM65N VDSS @Tjmax RDS(on) max. 710 V 0.270 Ω ID 15 A uc● 100 % avalanche tested rod
● Low input capacitance and gate charge P
● Low gate input resistance lete Application so
● Switching applications Ob
DESCRIPTION
) - These devices are N-channel Power MOSFETs t(s realized using the second generation MDmesh™ c technology. 3 2 1 TO-220 3 2 1 TO-220FP Figure 1. Internal schematic diagram $ ' 3 Obso !- V Table 1. Device summary Order codes STP20NM65N STF20NM65N Marking 20NM65N 20NM65N Package TO-220 TO-220FP Packaging Tubes Tubes May 2011 Doc ID 13845 Rev 2 1/16 16 Contents Contents STP20NM65N, STF20NM65N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristecs (curves) ........................... 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
