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TK12E60W - N-Channel MOSFET

Key Features

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  • Low drain-source on-resistance: RDS(on) ≤0.3Ω.
  • Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription for TK12E60W (Reference)

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12E60W，ITK12E60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.3Ω. ·Enhancement mode: Vth =2.7 to 3.7V (V...

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e on-resistance: RDS(on) ≤0.3Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 11.5 IDM Drain Current-Single Pulsed 46 PD Total Dissipation @TC=25℃ 110 Tj Max.

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