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TK12E60W - N-Channel MOSFET

Datasheet Summary

Features

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  • Low drain-source on-resistance: RDS(on) ≤0.3Ω.
  • Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK12E60W

Datasheet Details

Part number TK12E60W
Manufacturer INCHANGE
File Size 241.63 KB
Description N-Channel MOSFET
Datasheet download datasheet TK12E60W Datasheet
Additional preview pages of the TK12E60W datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12E60W，ITK12E60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.3Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 11.5 IDM Drain Current-Single Pulsed 46 PD Total Dissipation @TC=25℃ 110 Tj Max.
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