| Part Number | TK12E60W |
|---|---|
| Manufacturer | Toshiba |
| Overview | TK12E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK12E60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Su. (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolut. |
TK12E60W Datasheet
The TK12E60W is a Silicon N-Channel MOSFET.
| Part Number | TK12E60W |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK12E60W，ITK12E60W
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.3Ω. ·Enhancement mode:
Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA) ·100% a.
*Low drain-source on-resistance: RDS(on) ≤0.3Ω. *Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Switching Voltage Regulators *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL . |