Datasheet4U Logo Datasheet4U.com

TK5A65D - N-Channel MOSFET

Datasheet Summary

Features

  • Low drain-source on-resistance: RDS(ON) = 1.43Ω (MAX).
  • Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=1.0mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – TK5A65D

Datasheet Details

Part number TK5A65D
Manufacturer INCHANGE
File Size 269.79 KB
Description N-Channel MOSFET
Datasheet download datasheet TK5A65D Datasheet
Additional preview pages of the TK5A65D datasheet.

📁 Similar Datasheet

  • TK5A65D - N-Channel MOSFET (Toshiba Semiconductor)
  • TK5A65D - N-Channel 650V Power MOSFET (VBsemi)
  • TK5A65DA - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • TK5A65DA - N-Channel 650V Power MOSFET (VBsemi)
  • TK5A65W - N-Channel MOSFET (Toshiba)
  • TK5A60D - N-Channel MOSFET (Toshiba)
  • TK5A60D - N-Channel 650V Power MOSFET (VBsemi)
  • TK5A60W - MOSFETs (Toshiba Semiconductor)
  • TK5A60W5 - N-Channel MOSFET (Toshiba)
  • TK5A - Current Transducer (Topstek)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
iscN-Channel MOSFET Transistor TK5A65D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.43Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Pulsed 20 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 3.125 ℃/W isc website：www.iscsemi.
Published: |