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TK5A65D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK5A65D
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) • Enhancement-mode: Vth = 2.0 to 4.