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TK5A65W - N-Channel MOSFET

Datasheet Summary

Features

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  • Low drain-source on-resistance: RDS(ON) = 1.2Ω (typ. ).
  • Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.17mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK5A65W

Datasheet Details

Part number TK5A65W
Manufacturer INCHANGE
File Size 247.88 KB
Description N-Channel MOSFET
Datasheet download datasheet TK5A65W Datasheet
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Full PDF Text Transcription

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iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5A65W，ITK5A65W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (typ.) ·Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.17mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 5.2 IDM Drain Current-Single Pulsed 20.8 PD Total Dissipation @TC=25℃ 30 Tj Max.
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