Datasheet4U Logo Datasheet4U.com

TK5A65DA - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.34 Ω (typ. ) High forward transfer admittance: |Yfs| = 3.1 S (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed).

📥 Download Datasheet

Datasheet preview – TK5A65DA

Datasheet Details

Part number TK5A65DA
Manufacturer Toshiba Semiconductor
File Size 229.56 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK5A65DA Datasheet
Additional preview pages of the TK5A65DA datasheet.

📁 Similar Datasheet

  • TK5A65DA - N-Channel MOSFET (INCHANGE)
  • TK5A65DA - N-Channel 650V Power MOSFET (VBsemi)
  • TK5A65D - N-Channel MOSFET (INCHANGE)
  • TK5A65D - N-Channel 650V Power MOSFET (VBsemi)
  • TK5A65W - N-Channel MOSFET (INCHANGE)
  • TK5A65W - N-Channel MOSFET (Toshiba)
  • TK5A60D - N-Channel MOSFET (Toshiba)
  • TK5A60D - N-Channel MOSFET (INCHANGE)
  • TK5A60D - N-Channel 650V Power MOSFET (VBsemi)
  • TK5A60W - N-Channel MOSFET (INCHANGE)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TK5A65DA MOSFETs Silicon N-Channel MOS (π-MOS) TK5A65DA 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.34 Ω (typ.) High forward transfer admittance: |Yfs| = 3.1 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.
Published: |