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TK5P60W - N-Channel MOSFET

Features

  • Low drain-source on-resistance: RDS(ON) = 0.77Ω (typ. ).
  • Easy to control Gate switching.
  • Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.27mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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iscN-Channel MOSFET Transistor TK5P60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.77Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.27mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 5.4 A IDM Drain Current-Single Pulsed 21.6 A PD Total Dissipation @TC=25℃ 30 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 4.
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