TK5P60W - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TK5P60W
Manufacturer	Toshiba Semiconductor
File Size	234.86 KB
Description	MOSFETs
Datasheet	TK5P60W Datasheet
Additional preview pages of the TK5P60W datasheet.

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.77 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.27 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 5, 2014 |