Full PDF Text Transcription for UTT50N06L-TN3 (Reference)
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tance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 50 35 200 PD Total Dissipation @TC=25℃ 114 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to
UTT50N06L-TN3 Datasheet
