FTB07N08N
FTB07N08N is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
TO-263
BRAND
Lead Free Package and Finish
VDSS 85V
RDS(ON)(Typ.) 6mΩ
ID 120A
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
FTP07N08N
VDSS
Drain-to-Source Voltage
ID Continuous Drain Current Continuous Drain Current TC =100℃
120 85
IDM Pulsed Drain Current (NOTE
- 1)
Power Dissipation PD Derating Factor above 25℃ VGS Gate-to-Source Voltage
208 1.8 ±20
EAS Single Pulse Avalanche Energy(NOTE
- 2)
TL Maximum Temperature for Soldering
Operating Junction and Storage TJ and TSTG Temperature Range
150，-55 to150
Units V A A A W
W/℃ V m J
℃
Thermal...
