FTB23N10A
FTB23N10A is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER FT%23N10A
PACKAGE TO-
BRAND IPS
Pb Lead Free Package and Finish
VDSS 100V
RDS(ON) (Max.) 23 m:
ID 57A
G S TO-263 Not to Scale
Absolute Maximum Ratings TC=25 o C unless otherwise specified
Symbol
Parameter F T % 2 3 N1 0A
Un i t s
VDSS ID ID@ 100 o C IDM
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 o C
(NOTE
- 1) (NOTE
- 2)
100 57 Figure 3- Figure 6- 200 1.3
W W/ o C
VGS EAS
IAS dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy L=1.0 m H, ID=32 Amps Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE
-...