FTB11N08A
FTB11N08A is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER FTB11N08A
PACKAGE TO-263
BRAND IPS
Pb Lead Free Package and Finish
VDSS 75V
RDS(ON) (Max.) 11 m:
ID 100A
TO-263 Not to Scale
Absolute Maximum Ratings TC=25 o C unless otherwise specified
Symbol
Parameter
VDSS ID ID@ 100 o C IDM
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 o C
(NOTE
- 1) (NOTE
- 2)
VGS EAS
IAS dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy L=10 m H, ID=11 Amps Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE
- 3)
TL TPKG
TJ and TSTG
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds
Operating...