• Part: FTB11N08A
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: IPS
  • Size: 245.16 KB
Download FTB11N08A Datasheet PDF
IPS
FTB11N08A
FTB11N08A is N-Channel MOSFET manufactured by IPS.
Features : - Ro HS pliant - Low ON Resistance - Low Gate Charge - Peak Current vs Pulse Width Curve - Inductive Switching Curves Ordering Information PART NUMBER FTB11N08A PACKAGE TO-263 BRAND IPS Pb Lead Free Package and Finish VDSS 75V RDS(ON) (Max.) 11 m: ID 100A TO-263 Not to Scale Absolute Maximum Ratings TC=25 o C unless otherwise specified Symbol Parameter VDSS ID ID@ 100 o C IDM Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 o C (NOTE - 1) (NOTE - 2) VGS EAS IAS dv/dt Gate-to-Source Voltage Single Pulse Avalanche Engergy L=10 m H, ID=11 Amps Pulsed Avalanche Rating Peak Diode Recovery dv/dt (NOTE - 3) TL TPKG TJ and TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds Operating...