• Part: FTE10N06NA
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: IPS
  • Size: 57.61 KB
Download FTE10N06NA Datasheet PDF
IPS
FTE10N06NA
FTE10N06NA is N-Channel MOSFET manufactured by IPS.
Features : - Ro HS pliant - Low ON Resistance - Low Gate Charge - Peak Current vs Pulse Width Curve - Inductive Switching Curves Ordering Information PART NUMBER PACKAGE FTE10N06NA SOP-8 BRAND Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS Drain-to-Source Voltage ID Continuous Drain Current Continuous Drain Current TC =100℃ 55 8 IDM Pulsed Drain Current, VGS@10V Power Dissipation PD Derating Factor above 25℃ 2.5 0.02 VGS Gate-to-Source Voltage ±20 EAS Single Pulse Avalanche Energy TL Maximum Temperature for Soldering Operating Junction and Storage TJ and TSTG Temperature Range -55 to150 Units V A A A W W/℃ V m J ℃ Thermal Resistance Symbol Parameter RθJA Junction-to-Ambient Typ. Max....