FTE10N06NA
FTE10N06NA is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE FTE10N06NA SOP-8
BRAND
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS
Drain-to-Source Voltage
ID Continuous Drain Current Continuous Drain Current TC =100℃
55 8
IDM Pulsed Drain Current, VGS@10V
Power Dissipation PD Derating Factor above 25℃
2.5 0.02
VGS Gate-to-Source Voltage
±20
EAS Single Pulse Avalanche Energy
TL Maximum Temperature for Soldering
Operating Junction and Storage TJ and TSTG Temperature Range
-55 to150
Units V A A A W
W/℃ V m J
℃
Thermal Resistance
Symbol
Parameter
RθJA Junction-to-Ambient
Typ. Max....