FTE150N10N-1
FTE150N10N-1 is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
VDSS 100V
Lead Free Package and Finish
RDS(ON)
(Typ.VGS=10V)
113mΩ
4A
Ordering Information
PART NUMBER PACKAGE FTE150N10N-1 SOP-8
BRAND
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS
ID a1 M
VGS EAS a2 IAS a2
TJ, Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Avalanche Energy Avalanche Current Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering
100 4 3 16
±20 28.8 7.6
2 0.016
150,- 55 to 150
Units V A A A V m J A W
W/℃
℃
℃
Thermal Resistance
Symbol
Parameter...