• Part: FTE150N10N-1
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: IPS
  • Size: 1.19 MB
Download FTE150N10N-1 Datasheet PDF
IPS
FTE150N10N-1
FTE150N10N-1 is N-Channel MOSFET manufactured by IPS.
Features : - Ro HS pliant - Low ON Resistance - Low Gate Charge - Peak Current vs Pulse Width Curve - Inductive Switching Curves VDSS 100V Lead Free Package and Finish RDS(ON) (Typ.VGS=10V) 113mΩ 4A Ordering Information PART NUMBER PACKAGE FTE150N10N-1 SOP-8 BRAND Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS ID a1 M VGS EAS a2 IAS a2 TJ, Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Avalanche Energy Avalanche Current Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering 100 4 3 16 ±20 28.8 7.6 2 0.016 150,- 55 to 150 Units V A A A V m J A W W/℃ ℃ ℃ Thermal Resistance Symbol Parameter...