FTE25N10N
FTE25N10N is N-Channel MOSFET manufactured by IPS.
Features
:
- Ro HS pliant
- Low ON Resistance
- Low Gate Charge
- Peak Current vs Pulse Width Curve
- Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
SOP-8
BRAND
VDSS 100V
Lead Free Package and Finish
RDS(ON)(Typ.) 20mΩ
ID 6.3A
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
VDSS ID IDM
Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V (Note- 1) Power Dissipation Derating Factor above 25℃
100 6.3 25 2 0.016
VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy (Note- 2)
±20 210
EAR Avalanche Energy ,Repetitive
IAR dv/dt
Avalanche Current Peak Diode Recovery dv/dt(Note- 3)
0.2 5
TL Maximum Temperature for Soldering
Operating Junction and Storage TJ and TSTG Temperature Range
-55 to150
Units V A A W
W/℃ V m J m J...
