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FTE25N10N - N-Channel MOSFET

Features

  • RoHS Compliant.
  • Low ON Resistance.
  • Low Gate Charge.
  • Peak Current vs Pulse Width Curve.
  • Inductive Switching Curves Ordering Information PART NUMBER.

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Datasheet Details

Part number FTE25N10N
Manufacturer IPS
File Size 1.01 MB
Description N-Channel MOSFET
Datasheet download datasheet FTE25N10N Datasheet

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Full PDF Text Transcription

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS ● Synchronous Rectifier Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE FTE25N10N SOP-8 BRAND IPS FTE25N10N VDSS 100V Lead Free Package and Finish RDS(ON)(Typ.) 20mΩ ID 6.3A Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter FTE25N10N VDSS ID IDM PD Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V (Note*1) Power Dissipation Derating Factor above 25℃ 100 6.3 25 2 0.016 VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy (Note*2) ±20 210 EAR Avalanche Energy ,Repetitive 0.
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