International Rectifier IRF1404ZPBF
POWER MOSFET
| Part No. | IRF1404ZPBF |
|---|---|
| Datasheet | IRF1404ZPBF Download |
| Manufacturer |  International Rectifier |
| Description | POWER MOSFET |
| Buy | Stock & Price |
FEATURES
l l l l l l IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 40V RDS(on) = 3.7mΩ SDESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 75A TO-220AB IRF1404ZPbF D2Pak TO-262 IRF1404ZSPbF IRF1404ZLPbFABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM Max.
