DESCRIPTION
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. D 1 6 A D D 2 5 D G 3 4 S T o p V ie w Micro6™ ABSOLUTE MAXIMUM RATINGS
Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -4.0 -3.3 -16.5 2.0 1.3 0.02 ± 20 -55 to + 150 Units V A W W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient Max. 62.5 Units °C/W 1 10/04/00 IRF5806 ELECTRICAL CHARACTERISTICS
@ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Volt...
International Rectifier
